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EE08166 ED097OC1 SI7414DN 32611 MA3047W EZ1582 0211BN M2520E
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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1441
DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open collector VALUE 1500 5 4 15 3.5 70 130 -55~130 ae ae UNIT V V A A A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=1A IC=3A; IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE ts tf VF DC current gain Storage time Fall time Diode forward voltage IC=3A ; VCE=10V 5 4 H MIN 5 TYP.
2SD1441
SYMBOL VEBO VCEsat VBEsat
MAX
UNIT V
1.0 1.5 50 1 15 9 0.8 2.2 |I |I |I
V V A mA
IC=3A IBend=1A,LLeak=5|I
s s V
IF=-4A,IB=0
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1441
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
JMnic


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